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Search results for: DNTT (2011bp)

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#33628784   2021/02/11 To Up

Analysis of Differentially Expressed Genes in the Dentate Gyrus and Anterior Cingulate Cortex in a Mouse Model of Depression.

Major depressive disorder (MDD) is a prevalent, chronic, and relapse-prone psychiatric disease. However, the intermediate molecules resulting from stress and neurological impairment in different brain regions are still unclear. To clarify the pathological changes in the dentate gyrus (DG) and anterior cingulate cortex (ACC) regions of the MDD brain, which are the most closely related to the disease, we investigated the published microarray profile dataset GSE84183 to identify unpredictable chronic mild stress- (UCMS-) induced differentially expressed genes (DEGs) in the DG and ACC regions. Based on the DEG data, functional annotation, protein-protein interaction, and transcription factor (TF) analyses were performed. In this study, 1071 DEGs (679 upregulated and 392 downregulated) and 410 DEGs (222 upregulated and 188 downregulated) were identified in DG and ACC, respectively. The pathways and GO terms enriched by the DEGs in the DG, such as cell adhesion, proteolysis, ion transport, transmembrane transport, chemical synaptic transmission, immune system processes, response to lipopolysaccharide, and nervous system development, may reveal the molecular mechanism of MDD. However, the DEGs in the ACC involved metabolic processes, proteolysis, visual learning, DNA methylation, innate immune responses, cell migration, and circadian rhythm. Sixteen hub genes in the DG (Fn1, Col1a1, Anxa1, Penk, Ptgs2, Cdh1, Timp1, Vim, Rpl30, Rps21, Dntt, Ptk2b, Jun, Avp, Slit1, and Sema5a) were identified. Eight hub genes in the ACC (Prkcg, Grin1, Syngap1, Rrp9, Grwd1, Pik3r1, Hnrnpc, and Prpf40a) were identified. In addition, eleven TFs (Chd2, Zmiz1, Myb, Etv4, Rela, Tcf4, Tcf12, Chd1, Mef2a, Ubtf, and Mxi1) were predicted to regulate more than two of these hub genes. The expression levels of ten randomly selected hub genes that were specifically differentially expressed in the MDD-like animal model were verified in the corresponding regions in the human brain. These hub genes and TFs may be regarded as potential targets for future MDD treatment strategies, thus aiding in the development of new therapeutic approaches to MDD.
Yicong Wei, Keming Qi, Yi Yu, Wei Lu, Wei Xu, Chengzi Yang, Yu Lin

2098 related Products with: Analysis of Differentially Expressed Genes in the Dentate Gyrus and Anterior Cingulate Cortex in a Mouse Model of Depression.

1 mg100ug Lyophilized100ug100 ul100 μg100 μg100.00 ug1 mg100.00 ug100 μg5ug50ul

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#33397923   2021/01/04 To Up

Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering.

The temperature dependence of charge transport dramatically affects and even determines the properties and applications of organic semiconductors, but is challenging to effectively modulate. Here, we develop a strategy to circumvent this challenge through precisely tuning the effective height of the potential barrier of the grain boundary (i.e., potential barrier engineering). This strategy shows that the charge transport exhibits strong temperature dependence when effective potential barrier height reaches maximum at a grain size near to twice the Debye length, and that larger or smaller grain sizes both reduce effective potential barrier height, rendering devices relatively thermostable. Significantly, through this strategy a traditional thermo-stable organic semiconductor (dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, DNTT) achieves a high thermo-sensitivity (relative current change) of 155, which is far larger than what is expected from a standard thermally-activated carrier transport. As demonstrations, we show that thermo-sensitive OFETs perform as highly sensitive temperature sensors.
Yinan Huang, Xue Gong, Yancheng Meng, Zhongwu Wang, Xiaosong Chen, Jie Li, Deyang Ji, Zhongming Wei, Liqiang Li, Wenping Hu

2774 related Products with: Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering.

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#33337129   2020/12/18 To Up

Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors.

Inefficient charge injection and transport across the electrode/semiconductor contact edge severely limits the device performance of coplanar organic thin-film transistors (OTFTs). To date, various approaches have been implemented to address the adverse contact problems of coplanar OTFTs. However, these approaches mainly focused on reducing the injection resistance and failed to effectively lower the access resistance. Here, we demonstrate a facile strategy by utilizing the blurring effect during the deposition of metal electrodes, to significantly reduce the access resistance. We find that the transition region formed by the blurring behavior can continuously tune the molecular packing and thin-film growth of organic semiconductors across the contact edge, as well as provide continuously distributed gap states for carrier tunnelling. Based on this versatile strategy, the fabricated dinaphtho[2,3-:2',3'-]thieno[3,2-]thiophene (DNTT) coplanar OTFT shows a high field-effect mobility of 6.08 cm V s and a low contact resistance of 2.32 kΩ cm, comparable to the staggered OTFTs fabricated simultaneously. Our work addresses the crucial impediments for further reducing the contact resistance in coplanar OTFTs, which represents a significant step of contact injection engineering in organic devices.
Xiaolin Ye, Xiaoli Zhao, Shuya Wang, Zhan Wei, Guangshuang Lv, Yahan Yang, Yanhong Tong, Qingxin Tang, Yichun Liu

1044 related Products with: Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors.

1 G 1 G100 units 5 G500 MG 100 G250 mg10mg 5 G100 μg

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#33325607   2020/12/16 To Up

Highly Sensitive Artificial Visual Array Using Transistors Based on Porphyrins and Semiconductors.

Artificial visual systems with image sensing and storage functions have considerable potential in the field of artificial intelligence. Light-stimulated synaptic devices can be applied for neuromorphic computing to build artificial visual systems. Here, optoelectronic synaptic transistors based on 5,15-(2-hydroxyphenyl)-10,20-(4-nitrophenyl)porphyrin (TPP) and dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene (DNTT) are demonstrated. By utilizing stable TPP with high light absorption, the number of photogenerated carriers in the transport layer can be increased significantly. The devices exhibit high photosensitivity and tunable synaptic plasticity. The synaptic weight can be effectively modulated by the intensity, width, and wavelength of the light signals. Due to the high light absorption of TPP, an ultrasensitive artificial visual array based on these devices is developed, which can detect weak light signals as low as 1 µW cm . Low-voltage operation is further demonstrated. Even with applied voltages as low as -70 µV, the devices can still show obvious responses, leading to an ultralow energy consumption of 1.4 fJ. The devices successfully demonstrate image sensing and storage functions, which can accurately identify visual information. In addition, the devices can preprocess information and achieve noise reduction. The excellent synaptic behavior of the TPP-based electronics suggests their good potential in the development of new intelligent visual systems.
Xin Wang, Yang Lu, Junyao Zhang, Shiqi Zhang, Tianqi Chen, Qingqing Ou, Jia Huang

2864 related Products with: Highly Sensitive Artificial Visual Array Using Transistors Based on Porphyrins and Semiconductors.

4 Arrays/Slide2 Pieces/Box4 Membranes/Box2 Pieces/Box4 Membranes/Box4 Arrays/Slide4 Arrays/Slide4 Membranes/Box2 Pieces/Box4 Membranes/Box2 Pieces/Box

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#32700349   2020/07/23 To Up

High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate.

A novel approach for using conjugated rod-coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between "Photo-On" and "Electrical-Off" bistable states over 10 , and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.
Yun-Chi Chiang, Chih-Chien Hung, Yan-Cheng Lin, Yu-Cheng Chiu, Takuya Isono, Toshifumi Satoh, Wen-Chang Chen

2576 related Products with: High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate.

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#32693573   2020/07/30 To Up

Crystal Orientation Imaging of Organic Monolayer Islands by Polarized Light Microscopy.

The initial stage of organic semiconductor film formation greatly affects the properties of films, which are used in organic devices including thin-film transistors and light-emitting diodes. Organic monolayer islands that are formed on a suitable substrate can be observed with a conventional optical microscope. Furthermore, the use of a polarized microscope allows the determination of the refractive index and crystal orientation of islands. Here, we report organic monolayer islands of 2,9-diphenyl-dinaphtho[2,3-:2',3'-]thieno[3,2-]thiophene (DPh-DNTT) deposited on a Si substrate with thermally grown SiO to investigate the crystal orientation of islands by polarized light microscopy. The observation of DPh-DNTT islands under polarized quasi-monochromatic light reveals that reflection intensity depends on both the crystal orientation and irradiation wavelength. A comparison between experimental and calculated reflection intensities provides an estimate of an anisotropic complex refractive index in the plane. The crossed-polarized microscopy image of a SiO/Si substrate with DPh-DNTT islands shows that the contrast between the islands and SiO surface is sensitive to the angle between the polarizer and analyzer and depends on the direction of crystal orientation. The dependence of reflection contrast, which can be explained by the anisotropic extinction coefficient, is used to confirm crystal orientation.
Yoshiaki Hattori, Masatoshi Kitamura

2239 related Products with: Crystal Orientation Imaging of Organic Monolayer Islands by Polarized Light Microscopy.

1 kit(s) 5 mg1 kit1 mg1roll (50 m) 6 ml Ready-to-use 1 mg1 mg1 ml500 500 G

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#32586242   // To Up

A Knock-Down Cell-Based Study for the Functional Analysis of Chloride Intracellular Channel 1 (CLIC1): Integrated Proteomics and Microarray Study.

Previously, we detected that chloride intracellular channel 1 (CLIC1) was involved in the pathogenesis of atopic dermatitis (AD).
Shang-Jun Yin, Jae-Rin Lee, Bit-Na Lee, Jun-Mo Yang, Guo-Ying Qian, Yong-Doo Park, Myong-Joon Hahn

2879 related Products with: A Knock-Down Cell-Based Study for the Functional Analysis of Chloride Intracellular Channel 1 (CLIC1): Integrated Proteomics and Microarray Study.

100tests100ug Lyophilized100ug Lyophilized 100ul100 mg100μg100ug100ug Lyophilized10 mgOne 96-Well Microplate Ki100ug Lyophilized

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#32235524   2020/03/30 To Up

Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors.

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2-b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and -31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.
Damien Thuau, Katherine Begley, Rishat Dilmurat, Abduleziz Ablat, Guillaume Wantz, Cédric Ayela, Mamatimin Abbas

2355 related Products with: Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors.

96T96 wells (1 kit) 5 G96 wells (1 kit)500 MG1

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#32069044   2020/03/04 To Up

Massive Theoretical Screen of Hole Conducting Organic Materials in the Heteroacene Family by Using a Cloud-Computing Environment.

Materials exhibiting higher mobilities than conventional organic semiconducting materials such as fullerenes and fused thiophenes are in high demand for applications in printed electronics. To discover new molecules in the heteroacene family that might show improved charge mobility, a massive theoretical screen of hole conducting properties of molecules was performed by using a cloud-computing environment. Over 7 000 000 structures of fused furans, thiophenes and selenophenes were generated and 250 000 structures were randomly selected to perform density functional theory (DFT) calculations of hole reorganization energies. The lowest hole reorganization energy calculated was 0.0548 eV for a fused thioacene having 8 aromatics rings. Hole mobilities of compounds with the lowest 130 reorganization energy were further processed by applying combined DFT and molecular dynamics (MD) methods. The highest mobility calculated was 1.02 and 9.65 cm/(V s) based on percolation and disorder theory, respectively, for compounds containing selenium atoms with 8 aromatic rings. These values are about 20 times higher than those for dinaphthothienothiophene (DNTT).
Nobuyuki N Matsuzawa, Hideyuki Arai, Masaru Sasago, Eiji Fujii, Alexander Goldberg, Thomas J Mustard, H Shaun Kwak, David J Giesen, Fabio Ranalli, Mathew D Halls

2711 related Products with: Massive Theoretical Screen of Hole Conducting Organic Materials in the Heteroacene Family by Using a Cloud-Computing Environment.

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